| 摘要 |
A lower electrode of a capacitor which has uneven surface formed by using HSG-Si (hemispherical grained silicon) and which is used, for example, in a semiconductor device such as DRAM device. Such lower electrode is fabricated as follows. An insulating film is formed on a semiconductor substrate, and a silicon film is formed on the insulating film. Then, the silicon film is selectively patterned to pattern it. The semiconductor substrate is heated to remove moisture in the insulating film. An oxide film on the surface of the silicon film is then removed. Thereafter, silicon nuclei are formed on the surface of the silicon film by heating the semiconductor substrate in atmosphere containing silicon compound gas. The silicon nuclei are then grown and thereby a lower electrode is formed which has hemispherical grains on the surface thereof.
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