发明名称 |
Semiconductor thin film and semiconductor device |
摘要 |
After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film has features that it exhibits {111} orientation and that almost all crystal lattices have continuity at a crystal boundary. This type of grain boundaries greatly contribute to improving the carrier mobility, and make it possible to realize, semiconductor devices having very high performance.
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申请公布号 |
US6624051(B1) |
申请公布日期 |
2003.09.23 |
申请号 |
US20000645329 |
申请日期 |
2000.08.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHTANI HISASHI;YAMAZAKI SHUNPEI;KOYAMA JUN;OGATA YASUSHI;MIYANAGA AKIHARU |
分类号 |
H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/49;H01L29/786;(IPC1-7):H01L21/36 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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