发明名称 |
Ultra small thin windows in floating gate transistors defined by lost nitride spacers |
摘要 |
A tiny tunnel oxide window with dimensions smaller than the minimum feature resolution of the process equipment is formed in an EEPROM structure by placing dummy nitride spacers on either side of a nitride implant mask over a gate oxide layer after source and drain are formed by implantation at opposed sides of the nitride mask. The spacers are formed in a second nitride layer deposit after the nitride mask formation. The spacers are etched to have a desired tunnel oxide dimension. Another oxide layer is deposited over one of the source and drain regions, abutting a nitride spacer. The nitride layers are removed leaving a spacer nest, into which tunnel oxide is deposited. The device is finished in the usual way for an ESPROM structure.
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申请公布号 |
US6624027(B1) |
申请公布日期 |
2003.09.23 |
申请号 |
US20020143225 |
申请日期 |
2002.05.09 |
申请人 |
ATMEL CORPORATION |
发明人 |
DAEMEN ELEONORE;RENNINGER ALAN L.;LOJEK BOHUMIL |
分类号 |
H01L21/28;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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