发明名称 |
Method for forming high resistance resistor with integrated high voltage device process |
摘要 |
The method for forming high voltage device combined with a mixed mode process use an un-doped polysilicon layer instead of the conventional polysilicon layer. In the high resistance area, the ion implant is not used until the source region and the drain region are formed. A resistor is formed by etching oxide-nitride-oxide layer and performing ion implant process by using BF2 radical to the un-doped polysilicon layer to control the resistance. Then multitudes of contact are formed, wherein the high dosage of BF2 implant would reduce resistance between contacts and resistor.
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申请公布号 |
US6624079(B2) |
申请公布日期 |
2003.09.23 |
申请号 |
US20010931953 |
申请日期 |
2001.08.20 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
TSAI YUAN-LI;YANG MARCUS;CHEN RALPH;KAO HENG-CHUN;HWANG CHING-CHUN |
分类号 |
H01L21/02;H01L27/06;H01L27/08;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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