发明名称 Magnetron sputtering target for magnetic materials
摘要 A target for physical-vapor deposition (PVD) and methods for depositing magnetic materials are described Radio frequency (RF) or direct current (DC) power is introduced into the chamber through the target to produce plasma. The planar magnetron system is chosen for its high deposition rates. Since the permanent magnets are behind the target in the traditional system, a magnetic target interferes with the required magnetic fields on the target. To eliminate this problem permanent magnets are arranged on the surface and a magnetic target is used as a part of the magnetic circuit. Strong magnetic fields on the target can now be maintained for high deposition rates. The permanent magnets may be covered by a relatively thin, suitable protective-film or by a film of the same material as the target.
申请公布号 US6623610(B1) 申请公布日期 2003.09.23
申请号 US20020090948 申请日期 2002.03.02
申请人 ONISHI SHINZO 发明人 ONISHI SHINZO
分类号 H01J37/34;(IPC1-7):C23C14/35 主分类号 H01J37/34
代理机构 代理人
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