发明名称 Nonvolatile memory
摘要 A nonvolatile memory cell which is highly scalable includes a cell formed in a triple well. A pair of sources for a pair of cells on adjacent word lines each acts as the emitter of a lateral bipolar transistor. The lateral bipolar transistor of one cell operates as a charge injector for the other cell. The charge injector provides carriers for substrate hot carrier injection onto a floating gate.
申请公布号 US6624026(B1) 申请公布日期 2003.09.23
申请号 US20000532060 申请日期 2000.03.21
申请人 PROGRAMMABLE SILICON SOLUTIONS 发明人 LIU DAVID KUAN-YU;WONG TING-WAH;HUI KELVIN YUPAK
分类号 G11C16/04;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 主分类号 G11C16/04
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