发明名称 |
Nonvolatile memory |
摘要 |
A nonvolatile memory cell which is highly scalable includes a cell formed in a triple well. A pair of sources for a pair of cells on adjacent word lines each acts as the emitter of a lateral bipolar transistor. The lateral bipolar transistor of one cell operates as a charge injector for the other cell. The charge injector provides carriers for substrate hot carrier injection onto a floating gate.
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申请公布号 |
US6624026(B1) |
申请公布日期 |
2003.09.23 |
申请号 |
US20000532060 |
申请日期 |
2000.03.21 |
申请人 |
PROGRAMMABLE SILICON SOLUTIONS |
发明人 |
LIU DAVID KUAN-YU;WONG TING-WAH;HUI KELVIN YUPAK |
分类号 |
G11C16/04;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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