发明名称 |
Implant method for forming Si3N4 spacer |
摘要 |
A method is disclosed to form a reliable silicon nitride spacer between the lower edges of the floating gate and the control gate of a split-gate flash memory cell. This is accomplished by forming a floating gate with vertical sidewalls, forming a high temperature oxide layer followed by silicon nitride layer over the floating gate including the vertical sidewalls, ion implanting the nitride layer and then selectively etching it to form a robust silicon nitride spacer of well defined rectangular shape.
|
申请公布号 |
US6624466(B2) |
申请公布日期 |
2003.09.23 |
申请号 |
US20020074972 |
申请日期 |
2002.02.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHEN SEN-FU;CHO CHING-WEN;WANG HUAN-WEN;SHEN CHIH-HENG |
分类号 |
H01L21/28;H01L21/336;H01L29/423;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|