<p>A multichip module for interconnecting a plurality of integrated circuits. A thick layer of silicon dioxide, up to 20 .mu.m, serves as a dielectric to separate metal signal layers from power and ground planes. The multichip module also has a capacitor formed over a support base material which need not be conductive. A metal interconnect structure for a multichip module used for interconnecting a plurality of integrated circuits. The module interconnects can be provided with termination resistors and can also be formed to have a multiple padout structure. Reverse wedge wire bonding is also used to electrically connect the integrated circuit to the module allowing greater chip densities on the module surface. The chip/module assembly can then be mounted on a printed circuit board and the module leads wired directly to the board.</p>
申请公布号
CA2057744(C)
申请公布日期
2003.09.23
申请号
CA19912057744
申请日期
1991.12.16
申请人
NCHIP INC.
发明人
MCWILLIAMS, BRUCE M.;TUCKERMAN, DAVID B.;MHASKAR, PANDHARINATH A.;BENSON, DONALD;THALAPANENI, GARUNADA N.;LANG, CHARLES R.;BOBRA, YOGENDRA;SCHOENHOLTZ, JOSEPH, JR.;BRATHWAITE, NICHOLAS E.