Semiconductor detector for thermal neutrons based on pyrolytic boron nitride

摘要

A pBN neutron detector and method of forming a pBN neutron detector with the neutron detector formed by depositing multiple layers of pBN having a crystalline lattice structure with its crystallographic 'c plane' predominantly parallel to the deposited layers. The neutron detector forms a geometry having two opposite sides aligned parallel to the 'ab planes' of the structure and has a thickness of between one micron and one mm between the opposite sides. Metallized contacts are applied to the opposite sides and the detector is oriented relative to a source of neutrons such that the neutrons pass through the volume of the detector and cause electrons to flow in response to alpha particles generated from the interaction of neutrons with the Boron-10 isotope present in pBN.