发明名称 Redundant memory structure using bad bit pointers
摘要 The preferred embodiments described herein relate to a redundant memory structure using bad bit pointers. In one preferred embodiment, data is written in a first plurality of memory cells, and an error is detected in writing data in one of the memory cells. In response to the detected error, a pointer is written in a second plurality of memory cells, the pointer identifying which memory cell in the first plurality of memory cells contains the error. During a read operation, the data is read from the first plurality of memory cells, and the pointer is read from the second plurality of memory cells. From the pointer, the memory cell containing the error is identified, and the error is corrected. Other preferred embodiments are provided, and each of the preferred embodiments can be used alone or in combination with one another.
申请公布号 US2005044459(A1) 申请公布日期 2005.02.24
申请号 US20040961501 申请日期 2004.10.08
申请人 SCHEUERLEIN ROY E.;JOHNSON MARK G.;BOSCH DEREK J.;ILKBAHAR ALPER;TRINGALI J. JAMES 发明人 SCHEUERLEIN ROY E.;JOHNSON MARK G.;BOSCH DEREK J.;ILKBAHAR ALPER;TRINGALI J. JAMES
分类号 G11C7/10;G11C7/24;G11C29/00;G11C29/44;(IPC1-7):G11C29/00 主分类号 G11C7/10
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