| 发明名称 |
NEGATIVE CHARGE PUMP WITH BULK BIASING |
| 摘要 |
An n-channel MOS transistor negative-voltage charge pump is disclosed in which the bulks of the n- channel MOS transistors (26, 28) are biased in such a manner as to prevent turning on the parasitic bipolar transistor inherent in the CMOS environment of the charge pump structure.
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| 申请公布号 |
KR20050044927(A) |
申请公布日期 |
2005.05.13 |
| 申请号 |
KR20057004707 |
申请日期 |
2005.03.18 |
| 申请人 |
ATMEL CORPORATION |
发明人 |
FIGINI, LUCA;FRULIO, MASSIMILIANO;ODDONE, GIORGIO;TASSAN, CASER, FABIO |
| 分类号 |
G05F1/10;(IPC1-7):G05F1/10 |
主分类号 |
G05F1/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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