| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to improve capacitance and to simplify its structure by using a dielectric film without temperature dependence. CONSTITUTION: An insulating layer(12) with a storage node contact hole is formed on a semiconductor substrate(10). A contact plug(14) is formed in the storage node contact hole. A storage node pattern including diffusion barrier patterns(16,18) and a conductive pattern(20) is formed on the contact plug. A dielectric film(22) without temperature dependence made of Pb(Zn,Nb)TiO3 or Pb(Fe,Nb)TiO3 is then formed on the storage node pattern. A plate electrode(24) is formed on the dielectric film.
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