METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH TUNGSTEN SILICIDE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing attacks of fluorine into a gate oxide layer when forming a tungsten silicide layer. CONSTITUTION: A gate oxide layer(12) and a polysilicon layer(13) are sequentially formed on a semiconductor substrate(11). A thin oxide layer is formed on the surface of the polysilicon layer. A tungsten film is deposited on the thin oxide layer. A tungsten silicide layer(16) is formed by sintering reacting the tungsten film and the polysilicon layer. The thickness of the oxide layer is 20-40Å.