发明名称 Improved emitter turn-off thyristors and their drive circuits
摘要 A family of emitter turn-off thyristors and their drive circuit comprise a gate turn-on (GTO) thyristor, a first switch, the drain of the first switch being connected to the cathode of the GTO thyristor, and a second switch connected between the gate of the GTO thyristor and the source of the first switch. The first switch consists of many paralleled metal oxide semiconductor field effect transistors (MOSFETs). The anode of the GTO thyristor and the source of the first switch serve as the annode and the cathode, respective, of the emitter turn-off thyristor. The emitter turn-off thyristor has four control electrodes: the gate of the GTO thyristor, the control electrode of the second switch, the gate of the first switch, and the cathode of the GTO thyristor. The drive circuit comprises a current source circuit, a voltage clamp circuit, a current direction detector, and a control circuit. The ETO thyristor further comprises a current sensing and over-current detector circuit. The first switch is packaged in a printed circuit board.
申请公布号 AU2003220014(A8) 申请公布日期 2003.09.22
申请号 AU20030220014 申请日期 2003.03.05
申请人 VIRGINIA TECH INTELLECTUAL PROPERTIES, INC. 发明人 BIN ZHANG;OIN HUANG
分类号 H01L23/60;H01L27/02;H01L29/417;H01L29/744;H03K17/567;(IPC1-7):H03K17/72 主分类号 H01L23/60
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