| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent a bonding agent from creeping up the devices at the gaps between respective elements by providing a plurality of the devices contiguously with each other on a substrate with the gaps interposed between them, the bonding agent spread on the substrate to bond the devices, and bonding agent storing parts formed at the regions corresponding to the gaps between respective devices. SOLUTION: A high mounting density substrate 10 comprises a substrate 1, semiconductor devices Bn , Bn+1 , Bn+2 ,... as a plurality of devices disposed contiguously with each other on the substrate 1 with gaps interposed between them, a bonding agent 2 applied on the substrate 1 to bond the semiconductor devices Bn , Bn+1 , Bn+2 , and bonding agent storing recesses 4 formed at the regions corresponding to the gaps between respective semiconductor devices Bn , Bn+1 , Bn+2 ,... on the substrate 1. By providing the storing recesses 4, the bonding agent 2 is stored in the storing recesses 4 so that the bonding agent 2 is prevented from creeping up to the light receiving part in the surface of the semiconductor device at the gap between respective semiconductor devices Bn , Bn+1 , Bn+2 ,... even when the semiconductor devices Bn , Bn+1 , Bn+2 ,... are subjected to high mounting density.</p> |
