| 摘要 |
PURPOSE: A method for forming a storage node electrode of a semiconductor device is provided to maximize the surface area of the electrode by selectively etching a grain boundary of tungsten. CONSTITUTION: An interlayer dielectric(11) with a contact hole is formed on a substrate. A glue layer(21) is coated on the resultant structure including the contact hole. A tungsten film is deposited on the glue layer. The tungsten film and the glue layer are sequentially etched to form a tungsten pattern(23) by using a photoresist pattern as a mask. A plurality of tungsten pillars(29) are formed by selectively etching a grain boundary of the tungsten pattern(23).
|
