METHOD FOR FORMING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to restrain crack and to prevent damage of metal lines by reducing surface deformation of an aluminum alloy. CONSTITUTION: An interlayer dielectric(13) is formed on a semiconductor substrate(11). A contact hole is formed by selectively etching the interlayer dielectric. A diffusion barrier layer(17) and an aluminum alloy(19) are sequentially formed on the resultant structure. An anti-reflective layer including a titanium-rich TiN layer(21) and a nitrogen-rich TiN layer(23) is formed on the resultant structure by controlling the flow rate of nitrogen gas. At this time, the titanium-rich TiN layer has more titanium content of 0.1-10 percent compared to nitrogen and the nitrogen-rich TiN layer has more nitrogen content of 0.1-10 percent compared to titanium.