METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to guarantee capacitance sufficient for high integration of the semiconductor device by performing an additional simple process so that the size of the capacitor is maintained and the area of a storage node is increased. CONSTITUTION: An interlayer dielectric(3) is formed on a semiconductor substrate(1). The interlayer dielectric is etched by a photolithography process using a storage node contact mask to form a storage node contact hole(5) exposing the substrate. The storage node is formed of polycrystalline silicon coupled to the substrate through the storage node contact hole. A dielectric material with a plurality of pin holes are formed on the storage node. An isotropic wet etch process is performed to increase the diameter of the pin holes. The pin holes are filled with polycrystalline silicon selectively grown on the storage node exposed through the pin holes. The dielectric material is eliminated.