| 摘要 |
The method involves forming a mask on an etch resistant layer and forming an opening having an electrode pattern in the mask. Residue is removed from the mask, and the protective layer is selectively removed to expose the underlying semiconductor layer. An electrode is then formed in the opening. Manufacturing a semiconductor device having a semiconductor layer (12-17) and an electrode making contact with the semiconductor layer, which comprises: (a) forming an etching resistant protective layer (18) on the semiconductor layer; (b) forming a mask (19) on the protective layer; (c) forming an opening in the mask corresponding to the electrode pattern; (d) removing residue produced from forming the opening, attached inside the opening; (e) selectively removing the protective layer under the opening to expose the semiconductor layer; and (f) forming the electrode on the semiconductor layer using the mask. |
