METHOD TO REDUCE POLYSILICON DEPLETION IN MOS TRANSISTORS,申请号SG20020000747-传众专利搜索

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发明名称	METHOD TO REDUCE POLYSILICON DEPLETION IN MOS TRANSISTORS
摘要
申请公布号	SG98476(A1)	申请公布日期	2003.09.19
申请号	SG20020000747	申请日期	2002.02.08
申请人	CHARTERED SEMICONDUCTOR MANUFACTURING, LTD	发明人	YUNG FU CHONG;RANDALL CHA CHER LIANG;LAP CHAN;KIN LEONG PEY
分类号	H01L21/336;H01L21/4763;H01L21/768;(IPC1-7):H01L21/476	主分类号	H01L21/336
代理机构		代理人
主权项
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