| 摘要 |
<P>PROBLEM TO BE SOLVED: To make a thick film semiconductor layer for supporting a device structure comprising a III-V nitride semiconductor sufficiently thick without sacrificing crystallinity. <P>SOLUTION: The device structure 20 of a semiconductor device comprises a III-V nitride semiconductor and is composed of a first semiconductor layer 11, an emission layer 12 and a second semiconductor layer 13. A relatively thick third semiconductor layer 14 of n-type gallium nitride having a thickness of about 100 μm and a crystal defect density higher than that of each layer 11, 12, 13 constituting the device structure 20 is bonded onto the side of the second semiconductor layer 13 opposite to the emission layer 12. <P>COPYRIGHT: (C)2003,JPO |
