METHOD FOR MANUFACTURING SiON THIN FILM

摘要

PROBLEM TO BE SOLVED: To manufacture a SiON-based thin film with only small absorption of light at a faster deposition rate. SOLUTION: An inert gas, gaseous oxygen and gaseous nitrogen are introduced into a chamber 101 and the plasma of these gases is generated to sputter a silicon target 105 so as to deposit a thin film comprising silicon, oxygen and nitrogen on the principal surface of a substrate 103. The amount of supply of the gaseous oxygen is controlled to equal to or smaller than the maximum amount of supply which is determined by the supply flow rate of gaseous oxygen resulting in the maximum reduction rate in the sputtering rate caused by a compound produced on the surface of the silicon target 105 when the inert gas and gaseous oxygen are supplied for sputtering. Moreover, the amount of supply of the gaseous nitrogen is controlled to equal to or greater than the amount resulting in a desired extinction coefficient or lower of the thin film deposited on the substrate 103. COPYRIGHT: (C)2003,JPO