| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device arranged to connect a Cu- interconnect structure to the lower surface of a lower electrode of an MIM capacitor and to supply charges to the lower electrode through the Cu- interconnect, and can sustain the reliability of a wiring function capable of preventing the diffusion of Cu into an oxide film, e.g. an interlayer insulation film. SOLUTION: The semiconductor device comprises one or a plurality of lines 34a-e, and an MIM capacitor where a lower electrode 38 connected to the upper surfaces of the lines 34a-e and an upper electrode 40 are coupled capacitively. The lower electrode 38 is composed of a material for preventing the diffusion of the materials of the lines 34a-e and includes the lines 34a-e. COPYRIGHT: (C)2003,JPO |
