| 摘要 |
PURPOSE: A film bulk acoustic resonator(FBAR) filter and a fabrication method thereof are provided to simplify the fabrication process of FBAR without changing the thickness of a piezoelectric layer and a top electrode of the FBAR. CONSTITUTION: The film bulk acoustic resonator(FBAR) filter comprises a semiconductor substrate(23), and an insulation layer(24) formed on the above semiconductor substrate, and a serial and parallel film bulk acoustic resonator(FBAR) (21,22) which is formed on the above insulation layer and has electrodes of different thickness to have a different resonant frequency. The parallel FBAR is as high as the serial FBAR from the above insulation layer, and a frequency control electrode(25) having a fixed height toward the bottom is formed on the bottom of the above insulation film to make different resonant frequency. |
