METHOD FOR FORMING SELECTIVE FERROELECTRIC THIN FILM

摘要

PURPOSE: A method for forming a selective ferroelectric thin film is provided to be capable of simplifying the manufacturing process and reducing fabrication cost and time. CONSTITUTION: An electrode(12) is formed on a silicon substrate(11). The electrode is made of platinum. A convexoconcave region(13) is formed on the predetermined portion of the electrode. A paraelectric and ferroelectric thin film(14b,14a) are simultaneously formed on the predetermined portions of the resultant structure by depositing dielectric material. The ferroelectric thin film is formed on the convexoconcave region. Preferably, the paraelectric and ferroelectric thin film forming process is carried out using an organic metal CVD(Chemical Vapor Deposition) method.