| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration of read-out margin by enabling to correct it to the optimum value by increasing properly bit line capacity, in a ferroelectric memory. SOLUTION: A ferroelectric memory has a plurality of word lines WL, a plurality of bit lines BL intersecting orthogonally with them, a plurality of memory cells MC arranged at the intersections and having ferroelectric capacitors C1, C2 and capacitors Cc for correction which can be connected to the bit lines. The capacitors for correction are connected properly to the bit lines, and the capacitors can increase bit line capacity by the prescribed quantity. COPYRIGHT: (C)2003,JPO
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