FUSE BOX OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A fuse box of a semiconductor device and a method for manufacturing the same are provided to be capable of improving the throughput of the semiconductor device by partially etching an interlayer dielectric of a fuse region when forming a via hole at the interlayer dielectric. CONSTITUTION: The first interlayer dielectric(140) having the first metal plug, is formed at the upper portion of a fuse region for enclosing the fuse region. The first metal pattern is formed at the upper portion of the first metal plug. Then, the second interlayer dielectric(150) is formed on the first interlayer dielectric for enclosing the first metal pattern. The first and second opening portion are formed at the second interlayer dielectric for exposing the first metal pattern and the first interlayer dielectric, respectively.