METHOD FOR ETCHING THIN FILM AND METHOD FOR MANUFACTURING TRANSISTOR AND CAPACITOR OF SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A method for etching a thin film and a method for manufacturing a transistor and a capacitor of a semiconductor device using the same are provided to be capable of simplifying manufacturing processes and preventing the damage of a lower layer and the generation of residues by simultaneously patterning a metal thin film and a ferroelectric thin film using a helicon plasma etching process. CONSTITUTION: After forming a lower structure at the upper portion of a semiconductor substrate(201), an SBT(SrxBi1-xTa2O9) thin film(202), a metal thin film(203), and a metal mask(204) are sequentially formed on the resultant structure. Then, the metal thin film and the SBT thin film are simultaneously patterned by carrying out a helicon plasma etching process using the metal mask as an etching mask.