| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device of low capacity structure capable of fast modulation. <P>SOLUTION: The semiconductor laser device is provided with a semiconductor substrate; a multilayered growth layer which is formed on the main face side of the semiconductor substrate, which is electrically separated from the semiconductor substrate, and which includes an active layer as a middle layer interposed between a first conductivity type semiconductor layer as a lower layer and a second conductivity type semiconductor layer as an upper layer; a ridge formed between two grooves formed in the surface of a multilayered crystal layer without reaching the active layer; a first separation groove formed along the ridge outside the groove of one side or another side of the ridge and reaching the semiconductor layer of the lower layer of the active layer, and a second separation groove reaching the surface layer of the semiconductor substrate; an insulating film formed on the main face side of the semiconductor substrate except the top face of the ridge; a second electrode of which the part contacts with the second conductivity type semiconductor layer of the top face of the ridge and which extends on the insulating film over the second separation groove; and a second electrode which is departed from the ridge formed on the insulating film of the first separation groove side, and of which the part contacts with the semiconductor layer of the first conductivity type under the active layer. <P>COPYRIGHT: (C)2003,JPO |
