| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film semiconductor device which can constitute a low voltage circuit by improving the unevenness of Vth of a transistor formed in an active layer having a large interface level of a polysilicon or the like by performing a channel impurity density of a low Vth and a high concentration, and to provide a method for manufacturing the same. SOLUTION: The thin film semiconductor device comprises an N-channel MOS transistor and a P-channel MOS transistor formed of a gate electrode having a polycrystal silicon layer 3, a gate insulating film 4 and a gate polysilicon 5 on a glass board 1, an impurity implanted in the polysilicon 5 simultaneously or with the implantation of the impurity at the source/drain 8, 9 forming time or the LDD 7 forming time of the MOS transistors to convert the N-channel gate polysilicon into N-type and P-type channel gate polysilicon into P-type, the thickness of the layer 3 thinned as compared with the width of a depleted layer at the time of reverse channel forming so that the unevenness of the Vth is reduced to enable a low voltage drive. COPYRIGHT: (C)2003,JPO |
