| 摘要 |
PROBLEM TO BE SOLVED: To simply manufacture a superjunction semiconductor element having parallel pn junction layers each having small unevenness of an impurity concentration in good mass productivity. SOLUTION: A method for manufacturing the superjunction semiconductor element comprises the step of epitaxially growing a high specific resistance layer 32 having high resistance than that of a low resistance layer 31, and the step of irradiating the epitaxially grown layer 32 with boron and phosphorus ion beams repeatedly in the same chamber. In this case, internal pressure in the chamber at the ion beam irradiating time is set lower than that at the epitaxially growing time to suppress the scattering of the ion beam. COPYRIGHT: (C)2003,JPO |
