| 摘要 |
PURPOSE: A sputtering apparatus is provided to increase used hours of a shield mask and easily eliminate a deposition layer formed on the shield mask by changing the material of the shield mask surrounding the edge of a substrate in the sputtering apparatus and by rationalizing the type of roughness formed on the shield mask. CONSTITUTION: A process chamber is prepared. A cathode electrode is installed in the rear of a metal target positioned in the process chamber. An anode electrode is so installed to place a substrate on a position confronting the metal target. A shield body surrounds the edge of the substrate. At least two roughness(36a) are separated from each other at an interval of 1-3 millimeter, protruding from the surface of the shield body. The shield mask includes the shield body and the roughness. A plasma supply unit supplies plasma gas to a gap between the cathode electrode and the anode electrode. A magnetic field generating unit generates a magnetic field, reciprocating over the cathode electrode.
|
