| 摘要 |
PURPOSE: A magnetic RAM utilizing a diode by using a metal-induced lateral crystallization(MILC) and a method for forming the same are provided to reduce the temperature used in the process of diode formation, thereby allowing the diode to be formed after the MJT cell is processed. CONSTITUTION: A magnetic RAM utilizing a diode by using a metal-induced lateral crystallization(MILC) includes a semiconductor substrate(51), a wordline(53) formed on an active area of the semiconductor substrate(51), an MTJ cell(55) formed on top of the wordline(53), a diode(67) connected to the MTJ cell(55) by using the MILC method and a bit line(69) connected to the diode(67). In the magnetic RAM, the diode(67) includes an N+ polysilicon layer(61) and a P+ polysilicon layer(66). The N+ polysilicon layer(61) is obtained by annealing the N+ amorphous silicon layer at a temperature ranging from 100 °C to 450 °C. And, the P+ polysilicon layer(66) is obtained by annealing the P+ amorphous silicon layer at a temperature ranging from 100 °C to 450 °C.
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