| 摘要 |
There is disclosed a base material for forming a diamond film by vapor phase synthesis, wherein diamond particles having a particle (13) diameter of 2 nm to 100 nm exist at a density of 1 x 10<8> to 1 x 10<13> number/cm<2> on a surface of the base material (11), and spaces among the diamond particles are filled with diamond particles having a particle diameter of less than 2 nm. There can be provided a base material for forming a diamond film (14) by vapor phase synthesis which can provide a high generation density of diamond nuclei and a continuous diamond film even with an extremely small film thickness such as 10 mu m or less. <IMAGE> |
