| 摘要 |
PURPOSE: A semiconductor laser diode array and a fabrication method thereof are provided, which prevents optical interference between a ridge and a ridge, and simplifies a process. CONSTITUTION: An etch stop layer(55) is formed on a compound semiconductor stack substrate(50) including an active layer(53) emitting a laser beam. A plurality of ridges are formed on the upper part of the above etch stop layer and receive a current, in order for the active layer to emit the laser beam. A p-metal layer is formed along each side and a top plane of the ridges and a revealed plane of the etch stop layer. And a n-metal layer is formed on the bottom of the compound semiconductor stack layer. The p-metal layer formed in a side of one ridge is separated from the p-metal layer of an adjacent ridge.
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