VERTICAL TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A vertical transistor and a method for manufacturing the same are provided to be capable of improving frequency property and driving capability of a collector current by easily controlling the width of a base. CONSTITUTION: An N- epitaxial layer(12) is formed on a P-type substrate(2). An N- buried layer(4) is formed between the substrate and the epitaxial layer. A P++ buried layer(6) is formed between the N- buried layer(4) and the epitaxial layer(12). A P-type well is formed on the N- epitaxial layer. An N+ base region(16) is formed in the P-type well. A P+ emitter region(18) is formed in the base region. A P+ collector region(14) is connected to the P++ buried layer.