| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferromagnetic single electron element suitable for a high integrated density which can be integrated by improving operating instability due to a disturbance. SOLUTION: The ferromagnetic single electron element comprises ferromagnetic materials 1, 2 and 3 formed on an insulating board by a molecular-beam epitaxy, a chemical vapor growing method, a vacuum vapor depositing method or a sputtering method, an insulator formed by an anodizing method, a natural oxidizing method or a plasma oxidizing method so that two ferromagnetic materials 1, 3 and ferromagnetic materials 2, 3 are connected in series to form a ferromagnetic tunnel junction, one of both ends formed as a source electrode 5 and the other formed as a drain electrode 6. A central electrode 4 is formed between the two ferromagnetic tunnel junctions, and a gate electrode 7 formed with a resistor (resistance value: Rg) so as to be brought into contact with the electrode 4. The magnetizing directions of the source electrode 5, the drain electrode 6 and the electrode 4 are as shown by arrows, and arranged antiferromagnetically in a zero magnetic field, and a ferromagnetic array is taken by applying an external magnetic field. COPYRIGHT: (C)2003,JPO
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