| 摘要 |
PROBLEM TO BE SOLVED: To obtain a reverse breakdown voltage waveform having no recess. SOLUTION: A method for examining characteristics of a semiconductor element comprises the step of setting the energizing time of a reverse current (IR) at an arbitrary measuring point, to S1 to S6=2 ms from 0.6 ms of a prior art in steps S1 to S6, when the so-called soft waveform of smooth steepness, in response to the steepness of a rise gradient (ΔVR/ΔIR) of a reveres breakdown voltage waveform (VR) of an element (DUT) to be measured is shown. Thus, in step S5, a recess (He) of the reverse breakdown voltage waveform VR is recovered, a normal reverse voltage waveform (VR) is obtained, and accurate reverse breakdown voltage can be measured under accurate measuring conditions. COPYRIGHT: (C)2003,JPO
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