METHOD FOR FABRICATING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a contact of a semiconductor device is provided to prevent a hard mask thin film from being damaged in a self-aligned contact formation process by forming a hard mask thin film and a spacer thin film of a wordline and a bitline while using tantalum oxynitride having high selectivity regarding an oxide layer. CONSTITUTION: A gate oxide layer(100) and a gate electrode(104) are formed on a semiconductor substrate having an underlying structure. The hard mask thin film(106) is deposited on the gate electrode by using tantalum oxynitride. A photoresist layer is formed on the hard mask thin film. An exposure process is performed to form a pattern by using a mask in which a wordline region or a bitline region is defined. The wordline or bitline is formed by performing an etch process along the pattern. The wordline or bitline is oxidized. The spacer thin film(110) is formed on the sidewall of the wordline or bitline by using tantalum oxynitride. An oxide layer is deposited to bury the wordline or bitline to planarize the upper portion of the wordline or bitline. A contact mask is formed on the oxide layer. A dry etch process is performed along the contact mask to form a contact.