,申请号KR20010019574-传众专利搜索

发明名称
摘要	A systematized semiconductor device having a gate insulating film which can be formed thinner than a silicon oxide film and which is less susceptible to deterioration. Further, a semiconductor device having improved reliability in which an insulating film or a buried oxide film in an SOI substrate with improved hot carrier resistance is provided. A MOSFET has a gate insulating film composed of a two-layer film including a silicon oxide film containing deuterium and a silicon nitride film containing deuterium which are provided in this order on a silicon substrate and a gate electrode composed of a three-layer film including a doped polysilicon film, a barrier metal layer, and a metal film of tungsten are provided in this order on the silicon nitride film. A silicon nitride film is provided on the metal film and a coating insulating film covers the gate insulating film, gate electrode and silicon nitride film.
申请公布号	KR100398305(B1)	申请公布日期	2003.09.19
申请号	KR20010019574	申请日期	2001.04.12
申请人		发明人
分类号	H01L21/283;H01L29/78;H01L21/02;H01L21/28;H01L21/30;H01L21/316;H01L21/336;H01L21/76;H01L21/762;H01L21/8234;H01L21/8238;H01L21/8242;H01L21/8244;H01L21/8247;H01L27/08;H01L27/088;H01L27/092;H01L27/108;H01L27/11;H01L27/115;H01L27/12;H01L29/49;H01L29/51;H01L29/786;H01L29/788;H01L29/792	主分类号	H01L21/283
代理机构		代理人
主权项
地址