METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH CAPACITORS

摘要

PURPOSE: A method for fabricating a semiconductor device with capacitors is provided to remarkably reduce metal contact resistance by forming a metal contact hole exposing an upper electrode using a high dielectric layer and by using a process for reducing the exposed upper electrode. CONSTITUTION: A lower electrode(87), a dielectric layer(89) and the upper electrode are sequentially stacked on a semiconductor substrate(81) to form a capacitor. An upper interlayer dielectric is formed on the entire surface of the semiconductor substrate having the capacitor. The upper interlayer dielectric is patterned to form a metal contact hole exposing a predetermined region of the upper electrode. The upper electrode exposed by the metal contact hole is reduced to decrease the quantity of oxygen inside the upper electrode.