摘要 |
PURPOSE: A hot plate oven for fabricating a semiconductor device is provided to remarkably improve critical dimension(CD) uniformity in the outer portion of a wafer by adopting a new exhaust mechanism of a hot plate oven used in a resist flow. CONSTITUTION: The first air line is formed on an upper cover(10a). The second air line is formed in both edges of a lower chamber(10b). A plurality of air paths(13a) are formed in an air inflow plate installed between the upper cover and the lower chamber.
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