发明名称 HOT PLATE OVEN FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A hot plate oven for fabricating a semiconductor device is provided to remarkably improve critical dimension(CD) uniformity in the outer portion of a wafer by adopting a new exhaust mechanism of a hot plate oven used in a resist flow. CONSTITUTION: The first air line is formed on an upper cover(10a). The second air line is formed in both edges of a lower chamber(10b). A plurality of air paths(13a) are formed in an air inflow plate installed between the upper cover and the lower chamber.
申请公布号 KR20030073861(A) 申请公布日期 2003.09.19
申请号 KR20020013615 申请日期 2002.03.13
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, DONG HYEOK
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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