| 摘要 |
PURPOSE: A method is provided to prevent the tunnel insulation film from being damaged by an evaporation or etching process, while achieving improved field emission characteristics. CONSTITUTION: A method comprises the steps of forming a lower electrode(74) on a lower substrate(72); forming a photoresist pattern(76) on the center of the lower electrode and forming an insulation layer(82) on both sides of the lower electrode; forming an upper bus electrode(88) in the direction vertical to the lower electrode; forming an overhang insulation layer in such a manner that the overhang insulation layer covers the upper bus electrode; forming a field emission hole in such a manner that the photoresist pattern is exposed; exposing the lower electrode by removing the photoresist pattern; forming a tunnel insulation film on the lower electrode where electrons are to be emitted; and forming an upper electrode in the portion where electrons are to be emitted.
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