| 摘要 |
PROBLEM TO BE SOLVED: To make the distance between patterns more precise, even if processes for applying, exposing, developing, and removing photoresists are omitted, when the patterns are formed on the surface of a substance to be treated using a mask, without worsening shape precision. SOLUTION: In this pattern forming method, the whole surface of a substrate 1 is lightly etched after films 4 are formed on the surface of the substrate 1 by depositing pattern materials there via the mask 3, bulged-out portions 6 of the patterns which have entered below the mask 3 are removed. COPYRIGHT: (C)2003,JPO
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