HIGH VOLTAGE INTEGRATED CIRCUITS INCLUDING BIPOLAR TRANSISTOR WITHIN HIGH VOLTAGE ISLAND REGION

摘要

PURPOSE: A high voltage integrated circuits including a bipolar transistor within a high voltage island region is provided to be capable of increasing the size of an active region without the reduction of breakdown voltage by using a P-type isolation region as an inter-device isolation region. CONSTITUTION: A high voltage IC is provided with a high voltage island region(310), a low voltage region(330), and a junction termination region(320) formed between the high voltage island region and the low voltage region. The high voltage island region includes a bipolar transistor(312) and a low concentration isolation region(316) for enclosing the bipolar transistor. Preferably, the low concentration isolation region is made of a P-type conductive material.