发明名称 PLASMA TREATMENT DEVICE AND PLASMA TREATMENT METHOD EMPLOYING IT, DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To ensure stabilized treatment with high controllability at the time of performing treatment requiring power in a region below the effective range of a plasma excitation power supply in a plasma treatment device. <P>SOLUTION: The plasma treatment device comprising a plasma excitation power supply 10 and a plasma generation chamber 3 and performing desired plasma treatment on a plane 5 being treated is further provided with a mechanism 20 consuming power from the plasma excitation power supply 10 in addition to plasma generating power. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003264174(A) 申请公布日期 2003.09.19
申请号 JP20020064015 申请日期 2002.03.08
申请人 SONY CORP;CV RESEARCH:KK 发明人 HORIUCHI SATOSHI;ADACHI KEN;KOMOTO TETSUYA
分类号 H05H1/46;B01J19/08;C23C16/507;H01L21/205;H01L21/3065;H01L21/31 主分类号 H05H1/46
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