发明名称 |
PLASMA TREATMENT DEVICE AND PLASMA TREATMENT METHOD EMPLOYING IT, DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To ensure stabilized treatment with high controllability at the time of performing treatment requiring power in a region below the effective range of a plasma excitation power supply in a plasma treatment device. <P>SOLUTION: The plasma treatment device comprising a plasma excitation power supply 10 and a plasma generation chamber 3 and performing desired plasma treatment on a plane 5 being treated is further provided with a mechanism 20 consuming power from the plasma excitation power supply 10 in addition to plasma generating power. <P>COPYRIGHT: (C)2003,JPO |
申请公布号 |
JP2003264174(A) |
申请公布日期 |
2003.09.19 |
申请号 |
JP20020064015 |
申请日期 |
2002.03.08 |
申请人 |
SONY CORP;CV RESEARCH:KK |
发明人 |
HORIUCHI SATOSHI;ADACHI KEN;KOMOTO TETSUYA |
分类号 |
H05H1/46;B01J19/08;C23C16/507;H01L21/205;H01L21/3065;H01L21/31 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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