METHOD FOR DEPOSITING CAPACITOR ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for depositing a capacitor electrode of a semiconductor device is provided to be capable of smoothly processing the surface of a thin film of the capacitor electrode by using organic metal mixed material of Ru and RuO2. CONSTITUTION: After loading a wafer into a reaction chamber, a heating process is carried out at the wafer in the reaction chamber(S10). A depositing process is carried out at the upper surface of the wafer by flowing a precursor containing organic metal, reaction gas, and halogen compound using inert gas(S20). Preferably, CH3l is used as the halogen compound. Preferably, C2H5l is capable of being used as the halogen compound. Preferably, the halogen compound is adsorbed on the surface of the wafer, after depositing the precursor and the reaction gas by using the inert gas.