| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor device having a structure that is hard to generate a fatigue failure at a connecting part with a lead frame, wherein a connection with a semiconductor element is formed by lead frames. <P>SOLUTION: This power semiconductor device employs a resin-molded package 14, wherein the lead frames 6, 7 and 13, a metal block 15 which is used as a substrate for mounting the semiconductor element 1, and the semiconductor element 1, are integrally molded with a molded resin. Since the lead frame 6 and the semiconductor element 1 are surrounded by the molded resin, the bonding between the two is strengthened, and a power semiconductor device having a structure that is hard to generate a fatigue failure at the connecting part with the lead frame 6 is obtained. <P>COPYRIGHT: (C)2003,JPO |
