| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a light emitting element provided with an electrode having high bonding strength and difficult to be peeled off from a ball in which a preferable ohmic contact with an n-type layer, especially with an n-type layer damaged by etching, is established, and to provide a method for forming the electrode of the light emitting element. <P>SOLUTION: The gallium nitride based compound semiconductor light emitting element comprises an n-type gallium nitride based compound semiconductor layer and a p-type gallium nitride based compound semiconductor layer formed sequentially, in layers, on the surface of an insulating substrate. A part of the p-type gallium nitride based compound semiconductor layer is removed by etching, and a negative electrode is formed on the n-type gallium nitride based compound semiconductor layer. The negative electrode contains at least titanium, aluminum and gold, and the ohmic contact is established between the negative electrode and the n-type gallium nitride based compound semiconductor layer by being annealed at 400°C or higher. <P>COPYRIGHT: (C)2003,JPO |
