| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element of high reliability wherein noise is reduced by using a self oscillation phenomenon. SOLUTION: An active layer 5 has a multiple quantum well structure constituted of an InGaP well layer and an AlGaInP barrier layer. The summed thickness of the quantum well layers is made larger than 360Åand smaller than 500Å, and a light confinement coefficientΓto the active layer 5 is made larger than 0.14 and smaller than 0.19. As a result, a semiconductor laser element can be obtained wherein a self oscillation phenomenon is stably generated at a high temperature and sufficient long term reliability can be obtained, that is, noise is reduced by using the self oscillation phenomenon, and high reliability can be obtained. COPYRIGHT: (C)2003,JPO
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